PART |
Description |
Maker |
GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output 35ns; 64K x 16 CMOS dynamic RAM with extended data output 40ns; 64K x 16 CMOS dynamic RAM with extended data output 45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AT28C64B-15SI AT28C64B DOC224 |
From old datasheet system 64K (8K x 8 CMOS 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
PIC12F629 PIC12F629EMF PIC12F629EP PIC12F629ESN PI |
8-Pin FLASH-Based 8-Bit CMOS Microcontrollers 8-Pin, 8-Bit CMOS Microcontroller with EEPROM Data Memory IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,DIP,8PIN,PLASTIC
|
MICROCHIP[Microchip Technology]
|
12CE673 PIC12CE673 PIC12CE673_JW PIC12CE673-04_JW |
From old datasheet system 8-Pin 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory 8-Pin, 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory
|
MICROCHIP[Microchip Technology]
|
K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
LV2210V |
Basic Data Communication Receiver IC Bi-CMOS IC
|
Sanyo Semicon Device
|